1. features vds = -30v rds(on), vgs@-10v, ids@-4.2a = 70m rds(on), vgs@-4.5v, ids@-4.0a = 85m rds(on), vgs@-2.5v, ids@-1.0a = 130m we declare that the material of product compliance with rohs requirements and halogen free. s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. 2. applications advanced trench process technology high density cell design for ultra low on-resistance. 3. device marking and ordering information 4. maximum ratings(ta = 25oc) C continuous ta = 25c C pulsed (note 1) 5. thermal characteristics power dissipation thermal resistance, junctionCtoCambient(note 2) junction and storage temperature 1.repetitive rating: pulse width limited by the maximum junction temperature. 2.1-in2 2oz cu pcb board. device gateCtoCsource voltage C continuous vgs 14 lpb 2305lt1g s-lpb 2305lt1g 30v p-channel enhancement-mode mosfet -30 unit drainCsource voltage vdss marking shipping LPB2305LT1G p05 3000/tape&reel drain current v v a unit 1.4 id -4.2 idm -30 lpb2305lt3g p05 10000/tape&reel parameter symbol limits parameter symbol limits w pd ?55 +150 tj,tstg rja 140 oc/w o c sot23lc leshan radio company, ltd. rev.a nov 2016 1/5 1 2 3
30v p-channel enhancement-mode mosfet 6. electrical characteristics (ta= 25 oc ) off characteristics characteristic drainCsource breakdown voltage (vgs = 0, id = -250adc) zero gate voltage drain current (vgs = 0, vds = -24 vdc) gateCbody leakage current, forward (vgs = 14 vdc) gateCbody leakage current, reverse (vgs = - 14 vdc) on characteristics (note 3) forward transconductance (vds = -5vdc, id = -5adc) gate threshold voltage (vds = vgs, id = -250adc) static drainCsource onCstate resistance (vgs = -10 vdc, id = -4.2 adc) (vgs = -4.5 vdc, id = -4 adc) (vgs = -2.5 vdc, id = -1 adc) dynamic characteristics input capacitance (vgs = 0 v, f = 1.0mhz,vds= -15 v) output capacitance (vgs = 0 v, f = 1.0mhz,vds= -15 v) reverse transfer capacitance (vgs = 0 v, f = 1.0mhz,vds= -15 v) switching characteristics turn-on delay time rise time turn-off delay time fall time sourceCdrain diode characteristics forward voltage (vgs = 0 vdc, isd = -1 adc) 3.pulse test: pulse width 300 s, duty cycle 2.0%. unit vdc td(on) tr td(off) - - 64 85 gfs 7.0 11 - symbol min. -100 -30 - - adc nadc nadc ciss - rds(on) - -0.7 130 - vsd - - (vdd = -15v, rl= 3.6 id = -1a, vgen = -10v rg = 6) - 34.88 - - 3.52 - - 11.36 - -1 v vgs(th) idss m - - -1 vdc -1.3 - 2.32 - typ. max. igssr - igssf - - 100 vbrdss - s 826.18 - coss crss - 90.74 - - 53.18 - ns 53 70 86 tf pf pf pf leshan radio company, ltd. 2/5 lpb 2305lt1g, s-lpb 2305lt1g rev.a nov 2016
30v p-channel enhancement-mode mosfet 7 . elrctrical characteristics curves 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 rds(on),drain - to - source resistance( ) id,drain current(a) vgs=1.6v vgs=2.6v vgs=2.1v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 vgs(th)(normallized) t,temperature( ) 0 2 4 6 8 10 12 14 16 18 0 2 4 6 id,drain current(a) vds,drain - to - source voltage(v) vgs=1.6v vgs=2.6v vgs=2.1v 0 2 4 6 8 10 12 14 16 0 1 2 3 id,drain current(a) vgs,gate - to - source voltage(v) vds=5v 150 25 - 55 on - region characteristics transfer characteristics vgs(th) vs. temperature rds(on) vs. id leshan radio company, ltd. 3/5 lpb 2305lt1g, s-lpb 2305lt1g rev.a nov 2016
30v p-channel enhancement-mode mosfet 7 . elrctrical characteristics curves lpb 2305lt1g, s-lpb 2305lt1g 30v p-channel enhancement-mode mosfet 7 . elrctrical characteristics curves lpb 2305lt1g, s-lpb 2305lt1g (con.) leshan radio company, ltd. 4/5 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) power (w) 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c t j(max) =150c t a =25c 10 s normalized maximum transient thermal impedance maximum forward biased safe operating area single pulse power rating junction-to- ambient 0.001 0.01 0.1 1 10 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 zja normalized transient thermal resistance pulse width (s) normalized maximum transient thermal impedance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =90c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t o n t p d single pulse rev.a nov 2016
30v p-channel enhancement-mode mosfet 8.outline and dimensions 9.soldering footprint leshan radio company, ltd. 5/5 dim min nor max a 0.90 1.00 1.10 a1 0.01 0.0. 0.10 b 0.30 0.40 0.50 c 0.10 0.15 0.20 d 2.80 2.90 3.00 e 1.50 1..0 1.70 e 1.80 1.90 2.00 l 0.20 0.40 0..0 l1 0.45 0..0 0.75 h e 2..0 2.80 3.00 0o C 10o all dimensions in mm sot23-lc sot23-lc general notes 1.top package surface finish ra0.40.2um 2.bottom package surface finish ra0.70.2um 3.side package surface finish ra0.40.2um h e l ? l1 c e a r 0 . 1 5 8 a1 d b e a x y c b dim (mm) x 0.80 y 0.90 a 2.40 b 0.95 c 0.95 sot23-lc lpb 2305lt1g, s-lpb 2305lt1g rev.a nov 2016
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